Three dimensional integration and methods of through silicon via creation

ABSTRACT

A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This is continuation application of Ser. No. 13/422,445, filed Mar. 16,2012, which is a divisional application of U.S. Pat. No. 8,415,238,issued Apr. 9, 2013, the disclosure of which is incorporated byreference herein in its entirety.

BACKGROUND

The present invention relates to semiconductor device manufacturingtechniques, specifically fabrication of through silicon vias (TSVs) withmultiple diameters.

In the electronics industry, packaging density continuously increases inorder to accommodate more electronic devices into a package. In thisregard, three-dimensional (3D) stacking technology of wafers and/orchips contributes to the device integration process. Typically, asemiconductor wafer (a semiconductor device/substrate) or chip (asemiconductor device) includes several layers of integrated circuitry(e.g., processors, programmable devices, memory devices, etc.) built ona silicon substrate. A top layer of the wafer may be connected to abottom layer of the wafer through silicon interconnects or vias. Typicalvias include metallic material formed in cavities in the semiconductorthat electrically connect conductive contacts disposed in differentareas of a device. In order to form a 3D wafer stack, two or more wafersare placed on top of one other and bonded together.

Previous methods for electrically connecting the wafers used vias thatconsumed geometric space on the wafers or chips by connecting multiplevias of a single diameter utilizing additional wiring levels.Alternately, the formation of TSVs with complex shapes, such as multiplediameters in a single TSV, used inefficient fabrication methodsutilizing additional mask layers and patterning steps, which added cost,complexity, and process time to the manufacturing process.

BRIEF SUMMARY

According to one exemplary embodiment of the present invention, a methodincludes patterning a photoresist layer on a structure to define anopening and expose a first planar area on a substrate layer, formingdoped portions of the substrate layer in the first planar area, removinga portion of the photoresist to form a second opening defining a secondplanar area on the substrate layer, and etching to form a first cavityhaving a first depth defined by the first opening to expose a firstcontact in the structure and to form a second cavity defined by thesecond opening to expose a second contact in the structure.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The drawings are not necessarily drawn to scale. Theforgoing and other features, and advantages of the invention areapparent from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 illustrates a side cut away view of an exemplary embodiment of aportion of a three-dimensional interconnect (IC) structure havingmultiple bonded silicon substrates.

FIGS. 2A-9 illustrate exemplary methods for forming a through siliconvia (TSV) in the IC structure of FIG. 1.

FIGS. 10-13 illustrate an alternate exemplary method for forming athrough silicon via interconnects.

FIGS. 14-18 illustrate yet another alternate embodiment of a method forforming through silicon via interconnects.

DETAILED DESCRIPTION

FIG. 1 illustrates a cross section view of an exemplary embodiment of aportion of a three-dimensional interconnect (3D IC) structure having afirst component 102 arranged on a second component 104. The firstcomponent 102 and second component 104 may represent a portion of asilicon wafer or chip, in which the wafer or chip include afront-end-of-line (FEOL), middle-of-line (MOL), and back-end-of-line(BEOL) structures formed thereon, as known in the art. The firstcomponent 102 includes a substrate portion 106, and a wiring levelportion 108, which may include, for example, a conductive line embeddedin a dielectric layer. The substrate portion 106 includes asemiconductor material, which may be a single crystalline substratewhich may be selected from, but is not limited to, silicon, germanium,silicon-germanium alloy, silicon carbon alloy, silicon-germanium-carbonalloy, gallium arsenide, indium arsenide, indium phosphide, III-Vcompound semiconductor materials, II-VI compound semiconductormaterials, organic semiconductor materials, and other compoundsemiconductor materials. The second component 104 is similar to thefirst component 102, and includes a substrate portion 110 and a wiringlevel portion 112. Cap layers 114, for example, nitride layers of, forexample, a silicon nitride material, may be arranged on the top surfacesof wiring level portions 108 and 112. For illustrative purposes, onecapping layer per wiring level is depicted, although it is understood tothose practicing in the art that additional capping layers may bedispersed throughout the bonded 3D IC structure. The top surface ofsecond component 104 and the top surface of first component 102 can bebrought together in ‘face-to-face” arrangement and may be bonded by abonding material 116 comprising, for example, an adhesive or a metalliclayer such as, for example copper, or bonded with an oxide-oxideprocess, or other bonding process known in the art. Alternateorientations of the three-dimensional IC structure may include, forexample back-to-face bonding wherein an exposed top surface of a firstcomponent is bonded to a substrate portion of another second component.The arrangements may include an oxide or dielectric layer, which is notshown, deposited on first component 102 substrate portion 106. Thesubstrate portion 106 may be relatively thinner than the substrateportion 110 of the second component 104. The first component 102includes at least one conductive contact 120, and the second component104 includes at least one conductive contact 122, where both conductivecontacts are fabricated prior to the bonding of component 102 andcomponent 104.

Though the illustrated embodiments include a 3D IC structure in aface-to-face arrangement of two bonded components, alternate embodimentsmay include any number of bonded components, which can be arranged, forexample, face-to-face, face-to-back, or back-to-back. An opticalplanarization layer (OPL) 117 is deposited on an exposed surface of thebonded 3D IC. FIG. 1 illustrates layer 117 deposited on substrateportion 106 (i.e., the “back” of component 102) but in alternatearrangements 117 could be deposited on an exposed ‘top’ surface of acomponent. Sacrificial silicon layer 119 may be deposited on the topsurface of ODL layer 117. ODL layer 117 may include any material thatfunctions as an optical planarization layer known in the art, such as,for example, amorphous carbon. Sacrificial silicon layer 119 may also berelatively thinner than substrate portions 106 and 110.

The FIGS. 2A-9 illustrate an exemplary method for forming a TSV in the3D IC structure described above. In this regard, FIG. 2A illustrates aphotoresist layer 202 deposited on the sacrificial silicon layer 119.The photoresist layer 202 is patterned to define an opening 204 thatexposes a first planar area of the sacrificial silicon layer 119. FIG.2B illustrates a top view along the line A-A (of FIG. 2A) of a portionof the photoresist layer 202 including opening 204.

FIG. 3 illustrates a cavity 302 etched to a first depth (d1). The TSVcavity 302 may be etched using any suitable etching process such as, forexample, a reactive ion etching (RIE) process. In the illustratedembodiment, the etching process is timed to form the TSV cavity 302having the desired first depth (d1). The first depth (d1) may bedetermined by the thickness of the first component 102, the thickness ofthe second component 104, the locations of the conductive contacts, andthe anisotropy of the etch process.

FIG. 4 illustrates an opening 404 that is defined by the photoresistlayer 202. The opening exposes a second planar area of the sacrificialsilicon layer 119. The opening 404 is formed by removing a portion ofthe photoresist layer 202 by, for example, an in-situ O₂ flash processthat increases the size of the opening 204 (of FIG. 2A). In theillustrated embodiment, the O₂ flash process also reduces the thicknessof the photoresist layer 202. The opening 204 may be increased in place(“in-situ” without removing the device from the tooling) by using othergases known in the art, including, for example, CO₂, CO, N₂/H₂, and anycombination of all of these gases in optimized flow ratios. Such etchprocessing conditions and parameters that enhance lateral etch can bemanipulated in-situ to efficiently attain a desired opening 204specifications.

FIG. 5A illustrates an implantation of ions 501 in a doped region 502 ofthe sacrificial silicon layer 119. The ions 501 are implanted at anangle (θ) relative to a normal line 503. The implantation at the angle(θ) defines the doped region 502, and lowers the amount of ionsimplanted in other exposed regions of the sacrificial silicon layer 119.The angle (θ) may include any number of angles to define the desireddoped region 502 geometry, for example, 95 degrees to 175 degrees. FIG.5B illustrates a top view along the line A-A (of FIG. 5A) of a portionof the photoresist layer 202 and the opening 404. N-doping or similarGroup V doping elements can be used for the ions 501 to dope the dopedregion 502. When etched, the doped region 502 etches faster than undopedregions due to available additional electrons that attach to halogenatedetchants (etchants including halogen). The etch chemistry may be chosento be highly electronegative such that it is selective to thesacrificial silicon layer 119. The anisotropic etch forms adual-diameter via that has staggered via depths (described below) In analternate embodiment, p-doping can also be implemented to retard therelative etch rate of the doped region.

FIG. 6 illustrates the structure following etching of the n-doped region502 of the sacrificial silicon layer 119. Pressure setting in, forexample, the range 30 mTorr to 350 mTorr can be used to achieve thisetch. Pressure setting between 75 mTorr and 150 mTorr is used in theillustrated embodiment. Various optimized flow combinations of suchgases as CF4, CxHyFz, C12, HBr, with additives including O₂, N₂, and Armay be used. A halogen-based silicon etchant (F/Cl/Br/I) enhances theinfluence of the doping level on the etch selectivity. The etchselectively removes the doped region 502 from the sacrificial siliconlayer 119, and exposes a portion of the optical planarization layer 117.

FIG. 7 illustrates a cavity after another etching process that removes aportion of the optical planarization layer 117. Pressure setting in therange 30 mTorr to 350 mTorr can also be used to achieve the etch. Apressure setting between 75 mTorr and 200 mTorr is used in theillustrated embodiment. Various optimized flow combinations of gassessuch as, for example, CF₄, CxHyFz, O₂, N₂, H₂, and Ar may be used toachieve this etch at a tuned RF power setting.

FIG. 8 illustrates an enlarged TSV cavity 302 following an etchingprocess that increases the depth of a portion of the TSV cavity 302 toexpose the conductive contact 122, and increases the depth of the TSVcavity 302 that was partially defined by the doped region 502 to exposethe conductive contact 120. The etching process removes portions of thesacrificial silicon layer 119 and the optical planarization layer 117.For example, gasses such as SiF₄, SF₆, Ar, O₂, and HBr can be used toachieve the etch.

FIG. 9 illustrates a resultant through silicon via [TSV] 900. The via900 is formed by removing the remaining photoresist layer 202, thesacrificial silicon layer 119, and the optical planarization layer 117.A dielectric isolation region 902 may be formed, and a portion of thedielectric isolation layer is removed to expose portions of thecontacts. A barrier/seed layer 904 can be deposited in the TSV cavity302, and a conductive material 906 such as, for example copper ortungsten, can be deposited in the TSV cavity 302 and then planarizedusing, for example, a chemical mechanical planarization operation toform the through silicon via 900.

FIGS. 10-13 illustrate an alternate exemplary method for forming a viathat is similar to the method described above. In FIG. 10, the 3D ICstructure is similar to the IC structure of FIG. 2A, however, theillustrated IC structure does not include the optical planarizationlayer 117 or the sacrificial silicon layer 119. In this regard, thephotoresist layer 202 is deposited directly on the substrate portion 106to define the opening 204 that exposes a portion of the substrateportion 106 having a first planar area. As noted, a 3D IC structure canbe arranged within exposed ‘top’ surface in which case layer 202 can bedeposited thereon.

FIG. 11 illustrates a TSV cavity 1102 that is etched to a first depth(h1).

FIG. 12 illustrates an enlarged opening 1204 that is defined by thephotoresist layer 202. The opening 1204 exposes a second planar area ofthe substrate portion 106. The opening 1204 is formed by in-situ removalof a portion of the photoresist layer 202. A doped region 1202 can beformed by the implantation of ions 501 in a portion of substrate portion106 exposed by opening 1204. The ions 501 are implanted at an angle (θ)relative to a normal line 503 in a similar manner as described above.

FIG. 13 illustrates the TSV cavity 1102 that is formed by etching toexpose the contacts 120 and 122. Once the TSV cavity 1102 is etched toexpose the contacts 120 and 122, the photoresist layer 202 may beremoved, and a through silicon via may be formed in a similar manner asdescribed above. The resultant TSV is similar to the through silicon via900 (of FIG. 9).

FIGS. 14-18 illustrates yet another alternate embodiment of a method forforming vias. In FIG. 14, the IC structure is similar to the ICstructure of FIG. 10. In this regard, the photoresist layer 202 isdeposited directly on the exposed substrate portion 106, and ispatterned to define an opening 1404 that exposes a portion of thesubstrate portion 106 having a first planar area.

In FIG. 15, ions 1501 are implanted in the exposed portion of thesubstrate portion 106 to form a doped region 1502.

In FIG. 16, a portion of the photoresist layer 202 is removed to form anopening 1602. The opening 1602 exposes a second planar area of thesubstrate portion 106.

FIG. 17 illustrates resultant TSV cavities 1702 and 1704 following anetching process in which both TSVs are etched. The TSV cavities 1702 and1704 may be etched concurrently. The TSV cavity 1702 exposes theconductive contact 120, and the TSV cavity 1704 exposes the conductivecontact 122. The TSV cavity 1704 is etched at a faster rate than the TSVcavity 1702 due to the n-doped region 1502 (of FIG. 15). Alternatively,p-doing could also be used to retard the etch rate of the TSV formationas previously described.

FIG. 18 illustrates resultant through silicon vias 1800. The vias 1800may be formed by removing the photoresist layer 202, forming dielectricisolation regions 1802, and removing a portion of the dielectricisolation layer to expose portions of the contacts 120 and 122. Abarrier/seed layer 1804 and a conductive material 1806 are deposited inthe TSV cavities 1702 and 1704 to form the vias 1800. The vias may beconnected by a conductive wiring level including the conductive line1808, embedded in dielectric layer 1809. Wiring level may be formedutilizing standard damascene processing techniques known to thoseskilled in the art.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneore more other features, integers, steps, operations, elementcomponents, and/or groups thereof.

The description is presented for purposes of illustration, but is notintended to be exhaustive or to limit the invention in the formdisclosed. Many modifications and variations will be apparent to thoseof ordinary skill in the art without departing from the scope and spiritof the invention.

The diagrams depicted herein are just examples. There may be manyvariations to the structure or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

What is claimed is:
 1. A method comprising: forming a doped portion on asacrificial substrate layer of a substrate layer exposed by an openingin a photoresist layer, the doped portion defining an exposed dopedportion of the sacrificial substrate layer and an exposed undopedportion of the sacrificial substrate layer; and etching to form a firstcavity having a first depth defined by the first opening to expose afirst contact in the structure, to form a second opening in thephotoresist layer, and to form a second cavity defined by the secondopening to expose a second contact in the structure, wherein the exposeddoped portion is more selective to etching than the exposed undopedportion, and wherein the etching includes etching the doped portion suchthat the etching of the first cavity and the etching of the dopedportion results in openings of different depths.
 2. The method of claim1, wherein the structure includes a first wafer and a second wafer. 3.The method of claim 1, wherein the structure includes a first chip and asecond chip.
 4. The method of claim 1, wherein the method furthercomprises: removing the remaining photoresist layer; forming adielectric portion in the cavities; removing a portion of the dielectriclayer; depositing a barrier layer on the dielectric layer; filling thecavities with a conductive material; and removing the excess conductivematerial by planarization.
 5. The method of claim 1, wherein theconductive material is operative to electrically connect the firstconductor to the second conductor.
 6. The method of claim 1, wherein theforming doped portions further includes implanting ions in a planarregion of the sacrificial substrate layer to define the exposed dopedportion and the exposed undoped portion.
 7. The method of claim 1,wherein the first and second openings are off-centered to define anoff-centered dual diameter through silicon via (TSV).
 8. The method ofclaim 7, wherein the dual diameter TSV extends between an upper portionand a lower portion, the upper portion having a greater diameter thanthe lower portion.
 9. The method of claim 8, wherein the lower portionincludes a first wall extending continuously between the second contactand the undoped portion of the sacrificial substrate layer.
 10. Themethod of claim 9, wherein the lower portion includes a second wallopposite the first wall, the second wall extending between a first endabutting an exposed portion of the second contact and a second endaligned with an exposed portion of the first contact.